Nowadays, SiC devices have been applied in photovoltaic inverters, vehicle-mounted chargers and charging piles in China, but most of the SiC power devices in the domestic market are import-based and chiefly monopolized by Cree, Infineon and ROHM. Over past years, a relatively complete industrial chain system of silicon carbide has been initially established in China, including research institutes of China Electronics Technology Group Corporation, CRRC Times Electric, Cengol, Global Power Technology, Yangjie Electronics and the like. Domestic 600-3300VSiCSBD has been applied in batches, and some enterprises have developed 1200V/50ASiCMOSFET; Global Power Technology has built the first production line of silicon carbide device in China, and SBD products cover the voltage range of 600V-3300V; CRRC Times Electric's production line of 6-inch silicon carbide successfully trial-produced 1200V diode power chips in January 2018. However, the industrialization capability of SiC power devices is still not available in China with a market share of nearly zero. Universities such as Xidian University and 55 research institutes and companies such as China Electronics Technology Group Corporation in China have acquired some independent patents on SiC technology, but there still exists a large gap with regard to quantity and coverage.

The period from 2019 to 2025 is critical for the application of SiC technology in power and electronics industry. During this period of time, it is urgent for China to increase its support for SiC power devices, establish a R&D platform of SiC technology and SiC industry with independent intellectual property rights, and take the lead in realizing large-scale application of SiC technology in the fields of secondary power supply of aircraft, electric vehicles and photovoltaic new energy. The project achievement will be conducive to promoting the domestic independent intellectual property rights and industrialization of SiC, and fill the blank gap of products in Hebei Province and even in China.

After a research over 30 years', wide band gap semiconductor power devices represented by SiC have exhibited outstanding performance in high temperature resistance, radiation resistance, breakdown voltage and working frequency, and are suitable for working under harsh conditions. SiC power devices can substantially lower power consumption, increase the volume and weight of power electronic devices, and enhance reliability in comparison with traditional Si power devices. Thus, SiC power devices will boast a bright broad application prospect in secondary power supply of aviation, new energy vehicles, charging piles, photovoltaics, vehicle-mounted motors and power amplifiers.

Silicon carbide materials as the third-generation wide band gap semiconductor materials have aroused enormous concern from the industry due to such advantages as higher power conversion efficiency, higher working frequency, smaller chip area, and better anti-radiation interference capability in comparison with traditional silicon power devices. Moreover, silicon carbide power devices are used in an extremely wide range, and there is a great demand for silicon carbide power devices in semiconductor lighting, household appliances, consumer electronic equipment, new energy vehicles, high-speed rail, smart grid and military supplies. Now, although SiC devices have been applied in photovoltaic inverters, vehicle chargers, charging piles and other fields in China, but most SiC power devices in the domestic market depend on imports. Through the R&D of the project achievement, a breakthrough has been made in the reliability degradation mechanism of SiCJBS diode devices under high temperature and high field, and new concepts, structures and methods for resolving related scientific problems have been proposed. On the basis of resolving the above-mentioned scientific problems, the project achievement will break through two key technologies, namely, optimization design technology of SiC power devices, electromagnetic compatibility and multi-chip current sharing of SiC power modules, and gain technological innovation, thus comprehensively enhancing the original innovation capability of SiC power electronic devices in China and upgrading China's international competitive edge in this strategic field.

The project achievement chiefly laid emphasis on SiCJBS power discrete devices, achievd the R&D of SiCJBS diode high-power devices, optimized the structure design of devices, achieved the design, manufacture and industrialization of SiC devices with high efficiency and high reliability, formed the batch technology of 1200V SiC power JBS diodes and MOSFET chips, developed silicon carbide full-bridge power modules, and achieved the comprehensive demonstration application of all silicon carbide devices in secondary power supply of aviation, new energy vehicles, photovoltaics, charging piles, on-board motors and power amplifiers.

Expected Goals of the Project achievement:

(1) Expected goals of industrialization

In view of the enormous demand of aviation power equipment in China for high efficiency and high stability SiC power devices, the research organization carries out systematic research from three levels: device design, reliability and application, breaks through the bottleneck of voltage withstand structure design and key process technology of devices, resolves the reliability problem of devices, and realizes batch demonstration application of all SiC power devices, in a bid to fulfill the demand of aviation power supply for intelligent and efficient charging equipment. Thanks to the implementation of the project achievement, a collaborative R&D platform for SiC power devices and applications has been built, guiding the training of leading innovative and entrepreneurial talents, applying for no less than 5 invention patents, forming 1 enterprise standard and driving the industry to increase its output value by 10 million yuan.

(2) Expected technical quality indicators

The research organization is intended to launch the R&D of silicon carbide (SiC) JBS diodes for aviation power supply, optimize the design of device structure, guarantee the design, manufacture and industrialization of high efficiency and high reliability silicon carbide (SiC) devices, promote the batch technology of 1200V silicon carbide (SiC) power JBS diodes for batch production, develop silicon carbide full-bridge power modules, and achieve the comprehensive demonstration application of secondary power supply of aircraft with all silicon carbide devices.

(3) Expected social benefits

The project achievement fully responded to the direction of "research on high-efficiency avionics based on 3^rd generation of semiconductors and developing low-power and high-efficiency integrated circuit chip products" in the key support field of "2.2 key technologies of integrated circuit design" in the key research and development plan "New-generation Electronic Information Technology Innovation Project" in 2019. The project achievement intended to launch the research on design simulation of 600-1200V silicon carbide (SIC) JBS, grasp the field terminal design technology, break through the low interface state and high mobility gate dielectric formation technology, and complete the chip development, with the chip capacity ≥1200V/30A, break through key packaging technologies such as multi-chip current sharing and achieve the development of silicon carbide full-bridge power modules; through the application of devices, the project achievement has driven the vigorous development of the third-generation semiconductor technology in the whole province and even in China, mastered the core technology of independent intellectual property rights, promoted the formation of related supporting industrial chains, formed one enterprise standard, and applied for at least 5 invention patents, which is expected to drive the industry to increase its output value by 10 million yuan.

(4) Main work of R&D

The project is planned to lay emphasis on the following research in three aspects: design, key processes and modules:

1) Design and research on key technologies of silicon carbide (SiC) JBS devices

The research organization put forward the product design scheme of typical products of silicon carbide (SiC) JBS devices after carrying out the structure design of silicon carbide (SiC) JBS materials and active areas and junction terminal of devices, developing the key manufacturing technology of silicon carbide (SiC) JBS devices combined with test and analysis technology, studying the reliability test and analysis methods of silicon carbide (SiC) JBS diode devices under high temperature and high field stress to seek effective methods to improve the long-term reliability of Schottky metal and the reinforcement technology of devices against surge current, and performing reliability tests such as high temperature reverse bias, power aging and surge current resistance.

2) Research on package design and process of SiC power modules

With the help of special simulation software, the project builds a multi-chip current sharing simulation platform for SiC power modules which can determine the reliability test technology and evaluation method of SiC modules, verify the effectiveness of the optimal design of power module packaging structure, and develop high-efficiency SiC power modules that meet the power supply applications.

Mode of Operation

Intellectual Property Rights:

The project has applied for 14 domestic invention patents and 2 international PCTpatents, and has acquired 1 domestic invention patent authorization at present.